Document Details Document Type : Article In Journal  Document Title : Electrical characterizations of SnPc/p-GaAs heterojunction Electrical characterizations of SnPc/p-GaAs heterojunction   Subject : Physics  Document Language : English  Abstract : Current voltage and capacitance-voltage characteristics for SnPc thin film with ?105 nm thickness; deposited on p-GaAs single crystals have been investigated. The dark current voltage-characteristics of the prepared junction have been investigated in a temperature range from ∼303 to 393 K. The obtained results showed rectification behaviour. At low forward and reverse bias, the current was found to be limited by the thermoionic emission, while at high forward voltage, space charge limited current dominated by a single trap level of 0.22 eV. The analysis of the dark capacitance voltage characteristics indicated that the carrier concentration is 1.4 × 1014 cm -3 with a built in voltage ∼0.55 eV.© EDP Sciences.  ISSN : 1286-0042  Journal Name : EPJ Applied Physics  Volume : 46  Issue Number : 2  Publishing Year : 2009 AH 2009 AD  Article Type : Article  Added Date : Tuesday, October 13, 2009  Researchers Researcher Name (Arabic) Researcher Name (English) Researcher Type Dr Grade Email عادل صالح وعظ الدين فيده Adel Saleh Faidah Researcher Doctorate afaidah@kau.edu.sa El-Nahass, M.M El-Nahass, M.M Researcher Doctorate   Files File Name Type Description  23408.pdf pdf Abstract Back To Researches Page