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Faculty of Sciences
Document Details
Document Type
:
Article In Journal
Document Title
:
Thermal Study of Gallium Nitride - Metal Contact
دراسة حرارية لشريحة من مادة نتريد الجاليوم الملتصقة بمعدن
Subject
:
Physics
Document Language
:
English
Abstract
:
GaN films are prepared by MOCVD method on a sapphire substrate. The sample is n-type an semiconductor of 0.5 µm thickness and carriers concentration 2.2 × 1019cm–3 .Metal contacts are prepared by evaporation of metals on GaN films. I-V characteristics are carried out under vacuum in the temperature rang from 90 to 300 K. There is a departure from the nonlinear behavior of the current to a linear one as temperature increases due to the sample series resistance. The saturation current is found to be 8.3 × 10–7 A at room temperature; then, it increases with temperature. At room temperature, the barrier height at zero- bias and the flat band barrier height are calculated at different temperature and they are found to be 0.66 eV and 0.86 eV, respectively. Moreover, the ideality factor has been calculated at different temperature; it, increases with decreasing temperature and it is equal to 1.26 at room temperature. The serial resistant is found to be to 64 ? at room temperature.
ISSN
:
1319-1012
Journal Name
:
Journal of King Abdulaziz University - science
Volume
:
21
Issue Number
:
2
Publishing Year
:
2009 AH
2009 AD
Article Type
:
Article
Added Date
:
Monday, February 1, 2010
Researchers
Researcher Name (Arabic)
Researcher Name (English)
Researcher Type
Dr Grade
Email
سعيد سعد الامير
Al-Ameer, Saeed S
Researcher
Doctorate
ssaameer@yahoo.com
Files
File Name
Type
Description
24993.pdf
pdf
Abstract
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